IMN

Biblio. IMN

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Tranchant, J., Sandrini, J., Janod, E., Sacchetto, D., Corraze, B., Besland, M. .-P., Ghanbaja, J., De Micheli, G., Gaillardon, P. .-E. & Cario, L. (2017)
Control of Resistive Switching in Mott Memories Based on TiN/AM(4)Q(8)/TiN MIM Devices
. Shingubara, S., Karim, Z., MagyariKope, B., Shima, H., Kubota, H., Park, J. G., Kobayashi, K., Goux, L., Bersuker, G. & Saito, Y. (Eds.), Nonvolatile Memories 5. 
Added by: Richard Baschera (2018-07-17 08:58:09)   Last edited by: Richard Baschera (2018-07-24 12:41:41)
Type de référence: Chapitre/Section
Numéro d'identification (ISBN etc.): 978-1-60768-781-8
Clé BibTeX: Tranchant2017
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Catégories: INTERNATIONAL, PCM, PMN
Créateurs: Bersuker, Besland, Cario, Corraze, De Micheli, Gaillardon, Ghanbaja, Goux, Janod, Karim, Kobayashi, Kubota, MagyariKope, Park, Sacchetto, Saito, Sandrini, Shima, Shingubara, Tranchant
Collection: Nonvolatile {Memories} 5
Consultations : 2/300
Indice de consultation : 2%
Indice de popularité : 0.5%
Résumé     
The family of AM(4)Q(8) chalcogenide Mott insulators gained attention in recent years for its application opportunities. Here, we explore and validate the resistive switching mechanism of thin-film of GaV4S8 sandwiched between TiN electrodes. The device is fabricated via processes and materials compatible with microelectronics standards and demonstrates a good control and endurance of the non-volatile transitions over a large range of resistance. The achieved multi-level property enables to envision application as Resistive Random Access Memories (RRAM) or neuromorphic applications. We also showed the important role of the current compliance in the control of the transitions.
  
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