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Chang, C.-K., Wang, S.-P., Yang, S.-H., Puaud, A. & Nguyen, T.-P. (2018) Hybrid light-emitting devices by incorporating WO3 nanorod arrays as the electron transport layer and PEIE as the buffer layer. Superlattices and Microstructures, 113 667–677. 
Added by: Richard Baschera (2018-03-15 12:36:40)   Last edited by: Richard Baschera (2018-03-15 12:43:00)
Type de référence: Article
DOI: 10.1016/j.spmi.2017.11.051
Clé BibTeX: Chang2018
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Catégories: INTERNATIONAL, PMN
Créateurs: Chang, Nguyen, Puaud, Wang, Yang
Collection: Superlattices and Microstructures
Consultations : 2/312
Indice de consultation : 2%
Indice de popularité : 0.5%
Résumé     
In this research, we demonstrate novel inverted light-emitting devices based on n-typed tungsten trioxide (WO3) nanostructures. Two different types of WO3 nanostructures, including nanocluster layer (NCL) and nanorod arrays (NAs), were grown on the indium-tin oxide (ITO) substrates by the hydrothermal method. An ultra-thin polyethylenimine ethoxylated (PEIE) layer was deposited on top of WO3 nanostructures as the buffer layer for improving device performance. Inverted devices with the configuration of ITO/WO3 NCL or NAs/PEIE/poly(2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylene vinylene)/poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)/WO3 film/Au were constructed and evaluated. The best device based on WO3 NAs with height of 300 nm showed a max brightness of 3079 cd/m(2) and current efficiency of 0.22 cd/A. Our observation and results open up new opportunities to fabricate hybrid light-emitting devices. (C) 2017 Elsevier Ltd. All rights reserved.
  
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