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Igalson, M., Macielak, K., Urbaniak, A., Barreau, N. & Larsen, J. (2017) Excitation spectra of defect levels derived from photoinduced current transient spectroscopy - a tool for studying deep levels in Cu(In,Ga)Se-2 compounds. Thin Solid Films, 633 227–230. 
Added by: Richard Baschera (2017-07-27 07:30:18)   Last edited by: Richard Baschera (2017-07-27 07:32:58)
Type de référence: Article
DOI: 10.1016/j.tsf.2016.11.046
Numéro d'identification (ISBN etc.): 0040-6090
Clé BibTeX: Igalson2017
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Catégories: INTERNATIONAL, MIOPS
Créateurs: Barreau, Igalson, Larsen, Macielak, Urbaniak
Collection: Thin Solid Films
Consultations : 12/390
Indice de consultation : 3%
Indice de popularité : 0.75%
Résumé     
Energy required for the optical excitation of carriers onto defect levels is a parameter that compliments thermal activation energy and helps to understand the electronic properties of defects under study. Here a modification of the photoinduced current transient spectroscopy (PICTS) based on phase-sensitive detection is proposed which makes possible to measure the excitation spectra of defect levels. The representative results of the excitation spectra of the epitaxial CuGaSe2 and polycrystalline Cu(In,Ga)Se-2 thin films are presented. They illustrate the usefulness of the method as a tool for studying defect properties by providing data that supplement information derived from standard PICTS spectroscopy. (C) 2016 Elsevier B.V. All rights reserved.
  
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