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Shang, C., Gautier, R., Jiang, T., Faulques, E., Latouche, C., Paris, M., Cario, L., Bujoli-Doeuff, M. & Jobic, S. (2017) A p-Type Zinc-Based Metal-Organic Framework. Inorganic Chemistry, 56 6208–6213. 
Added by: Richard Baschera (2017-07-10 13:21:12)   Last edited by: Richard Baschera (2017-07-10 13:26:31)
Type de référence: Article
DOI: 10.1021/acs.inorgchem.7b00198
Numéro d'identification (ISBN etc.): 0020-1669
Clé BibTeX: Shang2017
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Catégories: MIOPS, PMN
Créateurs: Bujoli-Doeuff, Cario, Faulques, Gautier, Jiang, Jobic, Latouche, Paris, Shang
Collection: Inorganic Chemistry
Consultations : 1/409
Indice de consultation : 2%
Indice de popularité : 0.5%
Résumé     
An original concept for the property tuning of semiconductors is demonstrated by the synthesis of a p-type zinc oxide (ZnO)-like metal-organic framework (MOF), (ZnC2O3H2)(n), which can be regarded as a possible alternative for ZnO, a natural n-type semiconductor. When small oxygen-rich organic linkers are introduced to the Zn-O system, oxygen vacancies and a deep valence-band maximum, the two obstacles for generating p-type behavior in ZnO, are restrained and raised, respectively. Further studies of this material on the doping and photoluminescence behaviors confirm its resemblance to metal oxides (MOs). This result answers the challenges of generating p-type behavior in an n-type-like system. This concept reveals that a new category of hybrid materials, with an embedded continuous metal oxygen network, lies between the MOs and MOFs. It provides concrete support for the development of p-type hybrid semiconductors in the near future and, more importantly, the enrichment of tuning possibilities in inorganic semiconductors.
  
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