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Khalfaoui, W., Oheix, T., El-Zammar, G., Benoit, R., Cayrel, F., Faulques, E., Massuyeau, F., Yvon, A., Collard, E. & Alquier, D. (2017) Impact of rapid thermal annealing on Mg-implanted GaN with a SiOx/AlN cap-layer. Physica Status Solidi a-Applications and Materials Science, 214 1600438.
Added by: Richard Baschera (2017-07-10 12:45:38) Last edited by: Richard Baschera (2017-07-10 12:48:28) |
| Type de référence: Article DOI: 10.1002/pssa.201600438 Numéro d'identification (ISBN etc.): 1862-6300 Clé BibTeX: Khalfaoui2017 Voir tous les détails bibliographiques  |
Catégories: MIOPS Créateurs: Alquier, Benoit, Cayrel, Collard, El-Zammar, Faulques, Khalfaoui, Massuyeau, Oheix, Yvon Collection: Physica Status Solidi a-Applications and Materials Science |
Consultations : 1/451
Indice de consultation : 4% Indice de popularité : 1% |
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Local p-type doping in GaN is a key issue for device development but it remains a challenge to be achieved. In this work, we studied the activation of Mg implanted in the GaN. Multi-energy implantations were performed to achieve a "box-like" profile. SIMS measurements showed unexpected deep Mg profile due to defect-assisted channeling in the GaN. In addition, a high-density defect region induced by the implantation was evidenced by TEM characterization. To protect the GaN surface prior to high temperature annealing, an AlN cap-layer was deposited by reactive sputtering followed by SiOx deposition leading to a double cap-layer. Afterwards, the capped samples were RTA-annealed at high temperatures for several minutes under nitrogen. Two types of annealing processes were applied: a monocycle and a multicycle annealing. After annealing, the double cap-layer was etched using chemical solutions. AFM characterizations, after annealing and cap-layer etching, demonstrated that a GaN surface with similar roughness to as-grown samples and pit-free can be achieved after both monocycle and multicycle annealing steps. However, an AlGaN layer at the AlN/GaN interface is observed by ToF-SIMS and remained after the etching of the AlN layer. Finally, Schottky diodes were processed on the unimplanted and annealed samples, evidencing a double barrier, while P/N junction diodes are still being processed on the implanted and annealed samples. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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