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Gaboriau, D., Boniface, M., Valero, A., Aldakov, D., Brousse, T., Gentile, P. & Sadki, S. (2017) Atomic Layer Deposition Alumina-Passivated Silicon Nanowires: Probing the Transition from Electrochemical Double-Layer Capacitor to Electrolytic Capacitor. ACS Appl. Mater. Interfaces, 9 13761–13769. 
Added by: Richard Baschera (2017-06-20 14:50:38)   Last edited by: Richard Baschera (2017-06-20 15:25:02)
Type de référence: Article
DOI: 10.1021/acsami.7b01574
Numéro d'identification (ISBN etc.): 1944-8244
Clé BibTeX: Gaboriau2017
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Catégories: ST2E
Mots-clés: atomic layer deposition, Carbon, Chemical vapor deposition, chip micro-supercapacitors, coulombic efficiency, EMI-TFSI electrolyte, energy-storage, fabrication, Liquid electrolyte, Lithium-ion battery, performance, porous silicon, Silicon nanowires, Supercapacitor, tem, voltage-window, XPS
Créateurs: Aldakov, Boniface, Brousse, Gaboriau, Gentile, Sadki, Valero
Collection: ACS Appl. Mater. Interfaces
Consultations : 11/383
Indice de consultation : 2%
Indice de popularité : 0.5%
Silicon nanowires were coated by a 1-5 nm thin alumina layer by atomic layer deposition (ALD) in order to replace poorly reproducible and unstable native silicon oxide by a highly conformal passivating alumina layer. The surface coating enabled probing the behavior of symmetric devices using such electrodes in the EMI-TFSI electrolyte, allowing us to attain a large cell voltage up to 6 V in ionic liquid, together with very high cyclability with less than 4% capacitance fade after 10(6) charge/discharge cycles. These results yielded fruitful insights into the transition between an electrochemical double-layer capacitor behavior and an electrolytic capacitor behavior. Ultimately, thin ALD dielectric coatings can be used to obtain hybrid devices exhibiting large cell voltage retaining energy and power densities close to the ones displayed by supercapacitors. and excellent cycle life of dielectric capacitors, while
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