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Zhu, L., Lem, L. L. C., Nguyen, T.-P., Fair, K., Ali, S., Ford, M. J., Phillips, M. R. & Ton-That, C. (2017) Indirect excitons in hydrogen-doped ZnO. J. Phys. D-Appl. Phys. 50 115104. 
Added by: Richard Baschera (2017-04-11 13:27:25)   Last edited by: Richard Baschera (2017-04-11 13:28:46)
Type de référence: Article
DOI: 10.1088/1361-6463/aa5c23
Numéro d'identification (ISBN etc.): 0022-3727
Clé BibTeX: Zhu2017
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Catégories: INTERNATIONAL, PMN
Mots-clés: cathodoluminescence, donor, hydrogen, indirect excitons, spectroscopy, stacking fault, stacking-faults, x-ray-absorption, ZnO
Créateurs: Ali, Fair, Ford, Lem, Nguyen, Phillips, Ton-That, Zhu
Collection: J. Phys. D-Appl. Phys.
Consultations : 3/423
Indice de consultation : 2%
Indice de popularité : 0.5%
Résumé     
We present a correlative experimental and theoretical study of bound excitons in hydrogendoped ZnO, with a particular focus on the dynamics of their metastable state confined in the sub-surface region, using a combination of surface-sensitive characterisation techniques and density functional theory calculations. A metastable sub-surface emission at 3.31 eV found in H-doped ZnO is attributed to the radiative recombination of indirect excitons localised at basal plane stacking faults (BSFs) where the excitonic transition involves electrons bound to bond-centre hydrogen donors in the potential well of the BSF. Additionally, our work shows the electrical transport of ZnO Schottky junctions is dominated by electrons confined at BSFs in the near-surface region.
  
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