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Tranchant, J., Janod, E., Corraze, B., Besland, M. .-P. & Cario, L. (2015) From resistive switching mechanisms in AM(4)Q(8) Mott insulators to Mott memories. 2015 Ieee 7th International Memory Workshop (imw) New York.
Added by: Richard Baschera (2016-09-12 08:28:44) Last edited by: Richard Baschera (2016-09-12 09:10:34) |
| Type de référence: Chapitre/Section Numéro d'identification (ISBN etc.): 978-1-4673-6933-6 Clé BibTeX: Tranchant2015a Voir tous les détails bibliographiques  |
Catégories: PCM, PMN Mots-clés: am(4)q(8), bandgap semiconductors, devices, gata4se8, Mott insulator, non-volatile memory, transition, wide Créateurs: Besland, Cario, Corraze, Janod, Tranchant Éditeur: Ieee (New York) Collection: 2015 {Ieee} 7th {International} {Memory} {Workshop} (imw) |
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| Résumé |
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The application of electrical pulses on Mott insulators AM(4)Q(8) (A = Ga, Ge; M = V, Nb, Ta, Mo; Q = S, Se) induces a new phenomenon of resistive switching (RS). Appearing above threshold electric fields of a few kV/cm, this volatile transition stabilizes into a non volatile RS for higher electric fields. A pulse protocol alternating short multi-pulses of high voltage with long single pulses of low voltage enables to control this reversible RS in crystals and thin films. The resulting cycling performances obtained on GaV4S8 miniaturized devices demonstrate the interest of these compounds towards Mott memory applications.
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