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Shaheen, S. E., Olson, D. C., Dennler, G., Mozer, A. J., Kroon, J. M., Bernede, J. C., Cattin, L., Morsli, M., Kanth, S. R. B., Patil, S. & Stephant, N. (2012) Proceedings of the Spring 2011 E-MRS Meeting, Symposium S: Organic Photovoltaics: Science and Technology Improvement of the Efficiency of Organic Solar Cells Using the Terthiophene-Pyran-Malononitrile (T3PM) as Electron Donor, through the use of a MoO3/CuI Anode Buffer Layer. Energy Procedia, 31 81–88. 
Added by: Richard Baschera (2016-08-30 14:57:39)   Last edited by: Richard Baschera (2017-02-02 14:37:37)
Type de référence: Article
DOI: http://dx.doi.org/10.1016/j.egypro.2012.11.168
Numéro d'identification (ISBN etc.): 1876-6102
Clé BibTeX: Shaheen2012
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Catégories: INTERNATIONAL, MIOPS
Créateurs: Bernede, Cattin, Dennler, Kanth, Kroon, Morsli, Mozer, Olson, Patil, Shaheen, Stephant
Collection: Energy Procedia
Consultations : 18/839
Indice de consultation : 5%
Indice de popularité : 1.25%
Liens URLs     http://www.science ... /S1876610212016931
Résumé     
We focus on the contact between the anode and the electron donor (ED) in organic photovoltaic cells with planar heterojunction configuration. While the fullerene was the electron acceptor (EA), the terthiophene-pyran-malonitrile (T3PM) has been used as electron donor (ED). The HOMO and LUMO of T3PM have been estimated by electrochemical characterization to be –3.5 eV and –5.5 eV, which shows that it can be used as electron donor in a heterojunction with fullerene. The ITO contact plays a critical role in determining device efficiency, and the introduction of a thin anode buffer layer (ABL) between the ITO and the ED induces a significant improvement of the device efficiency. Different ABL have been used, the well-known Au and MoO3 and a more original, CuI, alone or coupled with MoO3. The thicknesses were 0.5 nm, 3.5 nm and 3 nm for Au, MoO3 and CuI respectively. It is shown that the ABL improve the cells performances. The best results are achieved with the couple MoO3/CuI through an increase of the open circuit voltage (Voc). Such improvement has been attributed to an increase of the shunt resistance. The influence of the ABLs can be explained partly by the fact that it raises the anode work function. Nevertheless, a study of the structures T3PM/ABL/ITO shows that the T3PM films grown on CuI are the most homogeneous which can explain the rise of the shunt resistance and therefore of Voc.
  
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