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Rouahi, A., Challali, F., Dakhlaoui, I., Vallee, C., Salimy, S., Jomni, F., Yangui, B., Besland, M. P., Goullet, A. & Sylvestre, A. (2016) Structural and dielectric characterization of sputtered Tantalum Titanium Oxide thin films for high temperature capacitor applications. Thin Solid Films, 606 127–132.
Added by: Richard Baschera (2016-06-03 13:54:53) Last edited by: Richard Baschera (2016-06-03 13:58:09) |
| Type de référence: Article DOI: 10.1016/j.tsf.2016.03.047 Numéro d'identification (ISBN etc.): 0040-6090 Clé BibTeX: Rouahi2016 Voir tous les détails bibliographiques  |
Catégories: INTERNATIONAL, PCM Mots-clés: Dielectric Relaxation, electrical-properties, hfo2, improvement, Metal-Insulator-Metal Capacitors, mim capacitors, relaxation, silicon, Titanium Tantalum Oxide, XPS Créateurs: Besland, Challali, Dakhlaoui, Goullet, Jomni, Rouahi, Salimy, Sylvestre, Vallee, Yangui Collection: Thin Solid Films |
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| Résumé |
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In this study, the dielectric properties of metal-oxide-metal capacitors based on Tantalum Titanium Oxide (TiTaO) thin films deposited by reactive magnetron sputtering on aluminum bottom electrode are investigated. The structure of the films was characterized by Atomic Force Microscopy, X-ray diffraction and X-ray photoelectron spectroscopy. The dielectric properties of TiTaO thin films were studied by complex impedance spectroscopy over a wide frequency range (10(-2) - to 10(5) Hz) and temperatures in -50 degrees C to 325 degrees C range. The contributions of different phases, phases' boundaries and conductivity effect were highlighted by Cole - Cole diagram (epsilon" versus epsilon'). Two relaxation processes have been identified in the electric modulus plot. A first relaxation process appears at low temperature with activation energy of 0.37 eV and it is related to the motion of Ti4+ (Skanavi's model). A second relaxation process at high temperature is related to Maxwell-Wagner-Sillars relaxation with activation energy of 0.41 eV. (C) 2016 Elsevier B.V. All rights reserved.
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