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Kanoun, M., Baron, T., Gautier, E. & Souifi, A. (2006) Charging effects in Ge nanocrystals embedded in SiO2 matrix for non volatile memory applications. Mater. Sci. Eng. C-Biomimetic Supramol. Syst. 26 360–363. 
Added by: Florent Boucher (2016-05-12 13:21:37)
Type de référence: Article
DOI: 10.1016/j.msec.2005.10.039
Numéro d'identification (ISBN etc.): 0928-4931
Clé BibTeX: Kanoun2006a
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Catégories: IMN
Mots-clés: c-v, chemical-vapor-deposition, electrical-properties, I-Vcharging, layers, memory, nano-crystal memories, nanocrystals, oxidation, oxide, silicon nanocrystals
Créateurs: Baron, Gautier, Kanoun, Souifi
Collection: Mater. Sci. Eng. C-Biomimetic Supramol. Syst.
Consultations : 5/382
Indice de consultation : 2%
Indice de popularité : 0.5%
Résumé     
Charging effects in germanium nanocrystals (nc-Ge) embedded in SiO2 matrix fabricated by low pressure chemical vapor deposition have been studied by the mean of capacitance-voltage (C-V) combined with current-voltage (I-V) analysis. The C- V measurements showed hysteresis phenomena indicating holes charging in the Ge islands. The I-V measurements at ambient temperature exhibited an N-shaped form attributed to screening effects of positive charges stored in the nc-Ge. The same measurement at low temperatures shows that the hole trapping is a thermally activated process and the I-V analysis with different ramp rates were used in order to investigate the charging phenomena. (c) 2005 Elsevier B.V. All rights reserved.
Added by: Florent Boucher  
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