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Gohier, A., Minea, T. M., Djouadi, A. M., Granier, A. & Dubosc, M. (2006) Limits of the PECVD process for single wall carbon nanotubes growth. Chem. Phys. Lett. 421 242–245. 
Added by: Florent Boucher (2016-05-12 13:21:37)
Type de référence: Article
DOI: 10.1016/j.cplett.2005.12.105
Numéro d'identification (ISBN etc.): 0009-2614
Clé BibTeX: Gohier2006
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Catégories: PCM
Mots-clés: catalyst, chemical-vapor-deposition, temperature synthesis
Créateurs: Djouadi, Dubosc, Gohier, Granier, Minea
Collection: Chem. Phys. Lett.
Consultations : 6/331
Indice de consultation : 2%
Indice de popularité : 0.5%
Résumé     
This Letter explores the capabilities of plasma enhanced chemical vapor deposition to grow vertical oriented single wall, double wall or multi walled carbon nanotubes (CNTs). Our dual process uses high-density low-pressure plasma excited by electron cyclotron resonance using acetylene diluted in ammonia. The early stages of CNTs synthesis have been probed taking advantage of the low growth rate of our process. Two antagonist effects have been shown up: the formation of catalyzed carbon nanotubes against ion assisted bonds breaking. The limits of plasma single wall CNTs growth are discussed and transitory stages have been revealed for the first time. (c) 2005 Elsevier B.V. All rights reserved.
Added by: Florent Boucher  
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