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Nguyen, T. P., Le Rendu, P., Gaudin, O., Lee, A. J. T., Jackman, R. B. & Huang, C. H. (2006) Defect states investigation in poly(2-methoxy,5-(2 ' ethyl-hexyloxy)-1,4-phenylene vinylene) (MEH-PPV). Thin Solid Films, 511 338–341. 
Added by: Florent Boucher (2016-05-12 13:21:36)
Type de référence: Article
DOI: 10.1016/j.tsf.2005.12.033
Numéro d'identification (ISBN etc.): 0040-6090
Clé BibTeX: Nguyen2006a
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Catégories: PMN
Mots-clés: device, dlts, electron, light-emitting-diodes, meh-ppv, polymer, Traps
Créateurs: Gaudin, Huang, Jackman, Le Rendu, Lee, Nguyen
Collection: Thin Solid Films
Consultations : 2/461
Indice de consultation : 2%
Indice de popularité : 0.5%
in this study, application of the charge based Deep Level Transient Spectroscopy (Q-DLTS) has been extended to poly(2-methoxy,5-(2ethylhexyloxy)-1,4-phenylene vinylene) (MEH-PPV) single layer diodes, whose cathode consisted of aluminium and anode of indium tin oxide (ITO). The results reveal a broad Q-DLTS spectrum, with at least two maxima, consistent with a complex distribution of trap states. Only the Q-DLTS maximum with the shortest relaxation time could be fully resolved over the temperature range used here (100-300 K), yielding activation energies and capture cross sections in the ranges 0.3-0.4 eV and 10(-20) 10(-18) cm(2), respectively. It will be shown that this energy level is likely related to a majority-carrier (hole) trap, consistent with a Poole-Frenkel injection mechanism and p-type doping of the MEH-PPV film. The origin of the second (non-resolved) Q-DLTS peak will also be discussed. (c) 2005 Elsevier B.V. All rights reserved.
Added by: Florent Boucher  
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