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Renaud, C., Huang, C. H., Zemmouri, M., Le Rendu, P. & Nguyen, T. P. (2006) Study of traps in polydiacetylene based devices using TSC technique. Eur. Phys. J.-Appl. Phys, 36 215–218. 
Added by: Florent Boucher (2016-05-12 13:21:36)
Type de référence: Article
DOI: 10.1051/epjap:2006139
Numéro d'identification (ISBN etc.): 1286-0042
Clé BibTeX: Renaud2006
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Catégories: PMN
Mots-clés: curves, films, level transient spectroscopy, light-emitting-diodes, photoluminescence, polymers, semiconductors, states, thermally stimulated currents, trapping parameters
Créateurs: Huang, Le Rendu, Nguyen, Renaud, Zemmouri
Collection: Eur. Phys. J.-Appl. Phys
Consultations : 1/467
Indice de consultation : 3%
Indice de popularité : 0.75%
Trap parameters in poly(1-(3,4-difluorophenyl)-2-(4-pentylcyclohexylphenyl)acetylene) (PDPA-2F) based devices have been investigated by using the thermally stimulated current (TSC) technique. The device structure is ITO-PEDOT-(PDPA-2F)-M, where M stands for the cathode metal (Al, Ca/Al, and Au). The results reveal at least three TSC peaks in devices denoted as peaks A, B and C. Comparing trap parameters in ITO-PEDOT-(PDPA-2F)-Au hole-only device and ITO-PEDOT-(PDPA-2F)-Ca Al (Al) bipolar devices, we assigned A and B trap types to hole-like traps and C type traps to electron-like traps. The trap densities are in the range of 10(15)-10(17) cm(-3) and the trap levels are 0.12 eV (A type traps), 0.36 eV (B type traps), and 0.25 eV (C type traps).
Added by: Florent Boucher  
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