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Pirasteh, P., Charrier, J., Soltani, A., Haesaert, S., Haji, L., Godon, C. & Errien, N. (2006) The effect of oxidation on physical properties of porous silicon layers for optical applications. Appl. Surf. Sci. 253 1999–2002. 
Added by: Florent Boucher (2016-05-12 13:21:36)
Type de référence: Article
DOI: 10.1016/j.apsusc.2006.03.083
Numéro d'identification (ISBN etc.): 0169-4332
Clé BibTeX: Pirasteh2006
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Catégories: PMN
Mots-clés: guides, nanostructured silicon, oxidation effects, physical and optical characterisations
Créateurs: Charrier, Errien, Godon, Haesaert, Haji, Pirasteh, Soltani
Collection: Appl. Surf. Sci.
Consultations : 4/281
Indice de consultation : 1%
Indice de popularité : 0.25%
Résumé     
In order to understand the optical loss mechanisms in porous silicon based waveguides, structural and optical studies have been performed. Scanning and transmission electron microscopic observations of porous silicon layers are obtained before and after an oxidation process at high temperature in wet O-2. Pore size and shape of heavily p-type doped Si wafers are estimated and correlated to the optical properties of the material before and after oxidation. The refractive index was measured and compared to that determined by the Bruggeman model. (c) 2006 Elsevier B.V. All rights reserved.
Added by: Florent Boucher  
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