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Ghenzi, N., Rubi, D., Mangano, E., Gimenez, G., Lell, J., Zelcer, A., Stoliar, P. & Levy, P. (2014) Building memristive and radiation hardness TiO2-based junctions. Thin Solid Films, 550 683–688. 
Added by: Florent Boucher (2016-04-29 09:26:46)
Type de référence: Article
DOI: 10.1016/j.tsf.2013.11.013
Numéro d'identification (ISBN etc.): 0040-6090
Clé BibTeX: Ghenzi2014
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Catégories: PMN
Mots-clés: devices, mechanisms, memories, Memristive, Non-volatile memories, Radiation hardness, resistive switching
Créateurs: Ghenzi, Gimenez, Lell, Levy, Mangano, Rubi, Stoliar, Zelcer
Collection: Thin Solid Films
Consultations : 8/314
Indice de consultation : 1%
Indice de popularité : 0.25%
Résumé     
We study micro-scale TiO2 junctions that are suitable to be used as resistive random-access memory nonvolatile devices with radiation hardness memristive properties. The fabrication and structural and electrical characterization of the junctions are presented. We obtained a retentivity of 10(5) s, an endurance of 10(4) cycles and reliable switching with short electrical pulses (time-width below 10 ns). Additionally, the devices were exposed to 25 MeV oxygen ions. Then, we performed electrical measurements comparing pristine and irradiated devices in order to check the feasibility of using these junctions as memory elements with memristive and radiation hardness properties. (C) 2013 Elsevier B.V. All rights reserved.
Added by: Florent Boucher  
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