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Ghenzi, N., Rubi, D., Mangano, E., Gimenez, G., Lell, J., Zelcer, A., Stoliar, P. & Levy, P. (2014) Building memristive and radiation hardness TiO2-based junctions. Thin Solid Films, 550 683–688.
Added by: Florent Boucher (2016-04-29 09:26:46) |
| Type de référence: Article DOI: 10.1016/j.tsf.2013.11.013 Numéro d'identification (ISBN etc.): 0040-6090 Clé BibTeX: Ghenzi2014 Voir tous les détails bibliographiques  |
Catégories: PMN Mots-clés: devices, mechanisms, memories, Memristive, Non-volatile memories, Radiation hardness, resistive switching Créateurs: Ghenzi, Gimenez, Lell, Levy, Mangano, Rubi, Stoliar, Zelcer Collection: Thin Solid Films |
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We study micro-scale TiO2 junctions that are suitable to be used as resistive random-access memory nonvolatile devices with radiation hardness memristive properties. The fabrication and structural and electrical characterization of the junctions are presented. We obtained a retentivity of 10(5) s, an endurance of 10(4) cycles and reliable switching with short electrical pulses (time-width below 10 ns). Additionally, the devices were exposed to 25 MeV oxygen ions. Then, we performed electrical measurements comparing pristine and irradiated devices in order to check the feasibility of using these junctions as memory elements with memristive and radiation hardness properties. (C) 2013 Elsevier B.V. All rights reserved.
Added by: Florent Boucher |