IMN

Biblio. IMN

Référence en vue solo

Soltani, A., Talbi, A., Gerbedoen, J. .-C., De Jaeger, J. .-C., Pernod, P., Mortet, V. & Bassam, A. (2014) Theoretical and experimental investigation of Lamb waves characteristics in AlN/TiN and AlN/TiN/NCD composite membranes. 2014 Ieee International Ultrasonics Symposium (ius), 2047–2050. 
Added by: Florent Boucher (2016-04-29 09:26:45)
Type de référence: Article
DOI: 10.1109/ULTSYM.2014.0510
Clé BibTeX: Soltani2014
Voir tous les détails bibliographiques
Catégories: PCM
Mots-clés: aln, composite membrane, devices, diamond, Lamb waves, propagation, tin
Créateurs: Bassam, De Jaeger, Gerbedoen, Mortet, Pernod, Soltani, Talbi
Collection: 2014 Ieee International Ultrasonics Symposium (ius)
Consultations : 1/461
Indice de consultation : 3%
Indice de popularité : 0.75%
Résumé     
In this study, we present a theoretical and experimental investigations of the zero order quasi-symmetric (S0) Lamb waves mode propagating in AlN/TiN and AlN/TiN/NCD composite membranes. Theoretical analysis of S0 mode characteristics shows that The AlN/TiN membrane enables to achieve smooth dispersion curves, high velocity up to 10000m/s and electromechanical coupling coefficient K-2 up to 3.5%. Thanks to the excellent mechanical properties of the Nano-Crystalline Diamond (NCD), the AlN/TiN/NCD membrane exhibits excellent acoustic wave properties: acoustic wave velocity more than 12000m/s for diamond film thickness less than 1 mu m. An intrinsic K-2 coefficient up to 5% can be reached for in the zone of maximum phase velocity dispersion. These characteristic can be of great interest for sensors applications. From the experimental point of view, a highly oriented c-axis Aluminum Nitride thin films were successfully grown on metallic TiN buffer layer by low temperature sputtering deposition. One important factor in controlling the quality of AlN was the growth of cubic TiN with (111) as preferential crystal orientation. Different acoustic lamb waves devices were fabricated and characterized confirming the very good piezoelectric activity of the AlN. For the case of AlN/TiN/NCD, the addition of the NCD thin films enhances drastically the mechanical toughness of the structure compared to AlN/TiN membrane.
Added by: Florent Boucher  
wikindx 4.2.2 ©2014 | Références totales : 2830 | Requêtes métadonnées : 57 | Exécution de script : 0.13366 secs | Style : Harvard | Bibliographie : Bibliographie WIKINDX globale