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Quinteros, C., Zazpe, R., Marlasca, F. G., Golmar, F., Casanova, F., Stoliar, P., Hueso, L. & Levy, P. (2014) HfO2 based memory devices with rectifying capabilities. J. Appl. Phys. 115 024501. 
Added by: Florent Boucher (2016-04-29 09:26:45)
Type de référence: Article
DOI: 10.1063/1.4861167
Numéro d'identification (ISBN etc.): 0021-8979
Clé BibTeX: Quinteros2014
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Catégories: PMN
Mots-clés: mechanisms, oxide, resistive switching memories
Créateurs: Casanova, Golmar, Hueso, Levy, Marlasca, Quinteros, Stoliar, Zazpe
Collection: J. Appl. Phys.
Consultations : 1/406
Indice de consultation : 3%
Indice de popularité : 0.75%
We report on the fabrication and characterization of metal/insulator/metal capacitor like devices, with both rectifying and hysteretic features. Devices are formed by two junctions, Ti/HfO2 and Co/HfO2. Each junction exhibits highly repetitive hysteretic I-V curves with a sharp transition from a high to a low resistance state (3-4 orders of magnitude jump). The opposite transition (from low to high) is induced by polarity reversal. The rectifying non-crossing characteristics of the I-V branches denote their potential use as a multifunctional device, acting as a built-in rectifier and memory cell in a single device. Based on the phenomenological model description by Zazpe et al. [Appl. Phys. Lett. 103, 073114 (2013)], we propose a circuital equivalent representation supported on switchable rectifying junctions. By exploring different electrode connections, we disentangle the role of the bulk transport in HfO2 devices. (C) 2014 AIP Publishing LLC.
Added by: Florent Boucher  
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