 |
 |
|
Arivazhagan, P., Faulques, E., Bennis, F. & Baskar, K. (2016) Time-Resolved Photoluminescence Studies on AlGaN Double Heterostructures. IETE Tech. Rev. 33 76–81.
Added by: Richard Baschera (2016-04-26 07:37:34) |
| Type de référence: Article DOI: 10.1080/02564602.2015.1042929 Numéro d'identification (ISBN etc.): 0256-4602 Clé BibTeX: Arivazhagan2016a Voir tous les détails bibliographiques  |
Catégories: INTERNATIONAL, MIOPS Mots-clés: AlGaN, chemical-vapor-deposition, gan, hrxrd, layer, Lifetime, mocvd, molecular-beam epitaxy, pl, quantum-wells, recombination dynamics, si, trpl Créateurs: Arivazhagan, Baskar, Bennis, Faulques Collection: IETE Tech. Rev. |
Consultations : 1/659
Indice de consultation : 5% Indice de popularité : 1.25% |
| Résumé |
|
Employing three different active layer widths, aluminium gallium nitride-based double heterostructures have been grown on GaN template by metal-organic chemical vapour deposition. The crystalline quality of the heterostructures has been investigated using high-resolution X-ray diffraction analysis. Optical and decay time studies have been carried out using room-temperature photoluminescence and time-resolved photoluminescence, respectively. The interface recombination velocity (S) between active and barrier layers has been determined.
Added by: Richard Baschera |