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Arivazhagan, P., Faulques, E., Bennis, F. & Baskar, K. (2016) Time-Resolved Photoluminescence Studies on AlGaN Double Heterostructures. IETE Tech. Rev. 33 76–81. 
Added by: Richard Baschera (2016-04-26 07:37:34)
Type de référence: Article
DOI: 10.1080/02564602.2015.1042929
Numéro d'identification (ISBN etc.): 0256-4602
Clé BibTeX: Arivazhagan2016a
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Catégories: INTERNATIONAL, MIOPS
Mots-clés: AlGaN, chemical-vapor-deposition, gan, hrxrd, layer, Lifetime, mocvd, molecular-beam epitaxy, pl, quantum-wells, recombination dynamics, si, trpl
Créateurs: Arivazhagan, Baskar, Bennis, Faulques
Collection: IETE Tech. Rev.
Consultations : 1/541
Indice de consultation : 2%
Indice de popularité : 0.5%
Résumé     
Employing three different active layer widths, aluminium gallium nitride-based double heterostructures have been grown on GaN template by metal-organic chemical vapour deposition. The crystalline quality of the heterostructures has been investigated using high-resolution X-ray diffraction analysis. Optical and decay time studies have been carried out using room-temperature photoluminescence and time-resolved photoluminescence, respectively. The interface recombination velocity (S) between active and barrier layers has been determined.
Added by: Richard Baschera  
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