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Polteau, B., Tessier, F., Chevire, F., Cario, L., Odobel, F. & Jobic, S. (2016) Synthesis of Ni-poor NiO nanoparticles for p-DSSC applications. Solid State Sci. 54 37–42. 
Added by: Richard Baschera (2016-04-19 07:44:48)
Type de référence: Article
DOI: 10.1016/j.solidstatesciences.2015.10.007
Numéro d'identification (ISBN etc.): 1293-2558
Clé BibTeX: Polteau2016
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Catégories: MIOPS, PMN
Mots-clés: nanoparticles, Ni-poor NiO, Nickel, Nitrogen doping, oxidation, Oxides, sensitized solar-cells, Synthesis, thin-films
Créateurs: Cario, Chevire, Jobic, Odobel, Polteau, Tessier
Collection: Solid State Sci.
Consultations : 1/584
Indice de consultation : 4%
Indice de popularité : 1%
Résumé     
To improve the performances of p-Dye Sensitized Solar Cell (p-DSSC) for the future, the synthesis of modified p-type nickel oxide semiconductor, commonly used as photocathode in such devices, was initiated with Ni3O2(OH)(4) as precursor. This specific nickel oxyhydroxide was first characterized by X-ray photo-electron spectroscopy and magnetic susceptibility measurements. Then its thermal decomposition was thoroughly studied in order to control the particles size of the as-prepared NiO nanopowders. Low temperature decomposition in air of this precursor allows the formation of Ni1-xO nanoparticles with a large amount of Ni vacancies and specific surface areas up to 250 m(2) g(-1). Its ammonolysis at 250 degrees C leads to nanostructured N-doped NiO (NiO:N) materials. (C) 2015 Elsevier Masson SAS. All rights reserved.
Added by: Richard Baschera  
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