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Buffiere, M., Barreau, N., Brammertz, G., Sahayaraj, S., Meuris, M. & Poortmans, J. (2015) Development of Co-evaporated In2S3 Buffer Layer for Cu2ZnSnSe4 Thin Film Solar Cells. 2015 Ieee 42nd Photovoltaic Specialist Conference (pvsc) New York. 
Added by: Laurent Cournède (2016-03-11 12:22:23)
Type de référence: Chapitre/Section
Numéro d'identification (ISBN etc.): 978-1-4799-7944-8
Clé BibTeX: Buffiere2015d
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Catégories: CESES, INTERNATIONAL
Mots-clés: Cd-free buffer layer, kesterite, physical process
Créateurs: Barreau, Brammertz, Buffiere, Meuris, Poortmans, Sahayaraj
Éditeur: Ieee (New York)
Collection: 2015 {Ieee} 42nd {Photovoltaic} {Specialist} {Conference} (pvsc)
Consultations : 9/374
Indice de consultation : 1%
Indice de popularité : 0.25%
Résumé     
In this work, we focus on the replacement of the commonly used but toxic Cd-based buffer layer by In2S3 thin films deposited by co-evaporation for application in Cu2ZnSnSe4 (CZTSe) solar cells. The impact of the deposition conditions of the buffer layer on the electrical behavior of CZTSe/In2S3 devices is first investigated. The best solar cell efficiencies were obtained for relatively thick In2S3 buffer layers (similar to 100 nm) deposited at low temperature ({<}100 degrees C). It is also observed that low [Cu]/([Zn]+[Sn]) ratio (CZT similar to 0.75) in the kesterite absorber leads to high efficiency for In-based buffered CZTSe solar cells, while the effect of the CZT ratio on CZTSe/CdS solar cell performances is not so clear. A conversion efficiency of 5.7 \% on CZTSe/In2S3 thin film solar cell is achieved.
Added by: Laurent Cournède  
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