IMN

Biblio. IMN

Référence en vue solo

Duquenne, C., Popescu, B., Tessier, P.-Y., Besland, M.-P., Scudeller, Y., Brylinski, C., Delage, S. & Djouadi, A. M. (2007) Magnetron Sputtering of Aluminium Nitride Thin Films for Thermal Management. Plasma Process. Polym. 4 S1–S5. 
Added by: Laurent Cournède (2016-03-10 22:02:30)
Type de référence: Article
DOI: 10.1002/ppap.200730101
Numéro d'identification (ISBN etc.): 1612-8850
Clé BibTeX: Duquenne2007
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Catégories: PCM
Mots-clés: Aluminium nitride, Magnetron sputtering, thermal properties, thin films
Créateurs: Besland, Brylinski, Delage, Djouadi, Duquenne, Popescu, Scudeller, Tessier
Collection: Plasma Process. Polym.
Consultations : 1/584
Indice de consultation : 4%
Indice de popularité : 1%
Résumé     
Well-crystallized aluminium nitride (AlN) thin films were synthesized on silicon substrates at room temperature using magnetron sputtering. Physicochemical properties of the film were investigated using X-ray diffraction, scanning electron microscopy, Fourier transform infrared spectrometry and Raman spectrometry. The thermal conductivity of the AlN films was characterized using an original electro-thermal technique. Thanks to an optimization of deposition parameters and target preparation, the different hexagonal crystalline orientations of AlN, i.e. (002), (100), (101) were isolated. It appears that AlN thin films deposited by DC magnetron sputtering exhibit a wide range of thermal conductivity, from 2 to 50 W . K(-1) . m(-1).
Added by: Laurent Cournède  
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