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Gohier, A., Djouadi, M. A., Dubosc, M., Granier, A., Minea, T. M., Sirghi, L., Rossi, F., Paredez, P. & Alvarez, F. (2007) Single- and few-walled carbon nanotubes grown at temperatures as low as 450 degrees C: Electrical and field emission characterization. J. Nanosci. Nanotechnol. 7 3350–3353. 
Added by: Laurent Cournède (2016-03-10 22:02:29)
Type de référence: Article
DOI: 10.1166/jnn.2007.883
Numéro d'identification (ISBN etc.): 1533-4880
Clé BibTeX: Gohier2007
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Catégories: PCM
Mots-clés: catalyst, chemical-vapor-deposition, conductive atomic force microscopy, few-walled carbon nanotubes, field emission, low temperature, pecvd, room-temperature, single-walled carbon nanotubes
Créateurs: Alvarez, Djouadi, Dubosc, Gohier, Granier, Minea, Paredez, Rossi, Sirghi
Collection: J. Nanosci. Nanotechnol.
Consultations : 4/413
Indice de consultation : 2%
Indice de popularité : 0.5%
Résumé     
Single-wall (SW-) and few-walled (FW-) carbon nanotubes (CNTs) were synthesized on aluminum/cobalt coated silicon at temperatures as low as 450 degrees C by plasma enhanced chemical vapor deposition technique (PECVD). The SWCNTs and FWCNTs grow vertically oriented and well separated from each other. The cold field emission studies of as-grown SWCNTs and FWCNTs showed low turn-on field emission threshold voltages, strongly dependent of the nanotubes morphology. Current-voltage curves of individual CNTs, measured by conductive atomic force microscopy (CAFM), showed an electrical resistance of about 90 K Omega, that is attributed mainly to the resistance of the contact between the CNTs and the conductive CAFM tip (Au and Pt).
Added by: Laurent Cournède  
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