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Edon, V., Li, Z., Hugon, M. .-C., Krug, C., Bastos, K. P., Miotti, L., Baumvol, I. J. R., Cardinaud, C., Durand, O. & Eypert, C. (2008) Electrical properties and interfacial characteristics of RuO2/HfAlOx/SiON/Si and RuO2/LaAlO3/SiON/Si capacitors. J. Electrochem. Soc. 155 H661–H668.
Added by: Laurent Cournède (2016-03-10 21:58:43) |
| Type de référence: Article DOI: 10.1149/1.2952529 Numéro d'identification (ISBN etc.): 0013-4651 Clé BibTeX: Edon2008a Voir tous les détails bibliographiques  |
Catégories: PCM Mots-clés: amorphous laalo3, atomic transport, chemical-vapor-deposition, dielectrics, growth, layer, silicon-nitride, spectroscopic ellipsometry, thermal-stability, thin-films Créateurs: Bastos, Baumvol, Cardinaud, Durand, Edon, Eypert, Hugon, Krug, Li, Miotti Collection: J. Electrochem. Soc. |
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Electrical and structural properties of metal-oxide-semiconductor capacitors having as dielectric nanoscopic LaAlO3 or HfAlOx films deposited on nitrided or nonnitrided Si substrates were investigated. The electrical superiority of RuO2/HfAlOx/SiON/Si stacks was evidenced by a dielectric constant of 19 and a leakage current density of 67 mA/cm(2) at a gate voltage of -1 V, for a capacitance equivalent to silicon oxide thickness of 1.1 nm. Morphology, composition, and structure of the stacks were accessed by X-ray diffraction and reflectometry, spectroscopic ellipsometry, X-ray photoelectron spectroscopy, and narrow resonant nuclear reaction profiling with isotopic substitution. In spite of presenting crystalline phases associated with HfO2, the HfAlOx dielectric layers led to a smoother and thinner interfacial layer, improved by the thermal nitridation of the Si substrate prior to high-kappa deposition. This SiON-like interlayer thickness is self-limited even after postdeposition annealing owing to the formation of an effective diffusion barrier by the strong N-Si-N and N-Si-O-N bonds, which is also effective in preventing substrate oxidation. (C) 2008 The Electrochemical Society.
Added by: Laurent Cournède |