Biblio. IMN

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Nguyen, T.-P., Renaud, C. & Huang, C.-H. (2008) Electrically active defects in organic semiconductors. J. Korean Phys. Soc. 52 1550–1553. 
Added by: Laurent Cournède (2016-03-10 21:58:42)
Type de référence: Article
Numéro d'identification (ISBN etc.): 0374-4884
Clé BibTeX: Nguyen2008a
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Catégories: PMN
Mots-clés: diodes, dlts, organic, Traps
Créateurs: Huang, Nguyen, Renaud
Collection: J. Korean Phys. Soc.
Consultations : 4/321
Indice de consultation : 1%
Indice de popularité : 0.25%
Organic semiconductors have become a target for new potential applications in electronic field such as light-emitting diodes, photovoltaic cells and field-effect transistors. The presence of defects in organic materials greatly affects their electronic properties and, hence, the performances of the devices using them as an active component. We present and discuss the determination of electrically active defects in organic materials, which is illustrated by a concrete example using the data obtained from organic light-emitting devices having a polyacethylene derivative as an emitter.
Added by: Laurent Cournède  
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