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Duquenne, C., Tessier, P. Y., Besland, M. P., Angleraud, B., Jouan, P. Y., Aubry, R., Delage, S. & Djouadi, M. A. (2008) Impact of magnetron configuration on plasma and film properties of sputtered aluminum nitride thin films. J. Appl. Phys. 104 063301.
Added by: Laurent Cournède (2016-03-10 21:58:41) |
| Type de référence: Article DOI: 10.1063/1.2978226 Numéro d'identification (ISBN etc.): 0021-8979 Clé BibTeX: Duquenne2008 Voir tous les détails bibliographiques  |
Catégories: PCM Mots-clés: aln, deposition, field, flux, growth, ion irradiation, low-temperature, microstructure, preferred orientation Créateurs: Angleraud, Aubry, Besland, Delage, Djouadi, Duquenne, Jouan, Tessier Collection: J. Appl. Phys. |
Consultations : 1/931
Indice de consultation : 6% Indice de popularité : 1.5% |
| Résumé |
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We have investigated the growth of the c-axis oriented aluminum nitride (AlN) thin films on (100) silicon by reactive dc magnetron sputtering at low temperature, considering the effect of the magnet configuration on plasma and film properties. It appears that a magnet modification can significantly modify both the plasma characteristics and the film properties. Electrical and optical characterizations of the plasma phase highlight that depending on the magnet configuration, two very different types of deposition process can be involved in the same deposition chamber. On the one hand, with a balanced magnetron (type 1), the deposition process enhances the production of AlN dimers in the plasma phase and enables to synthesize AlN films with different preferential orientations (100, 002, and even 101). On the other hand, a strongly unbalanced magnetron (type 2) provides a limited production of AlN species in the plasma phase and a strong increase in the ratio of ions to metal atom flux on the growing films. In the latter case, the ion energy provided by the ion flux to the growing film is typically in the 20-30 eV range. Thus, dense (002) oriented films with high crystalline quality are obtained without any substrate heating. (c) 2008 American Institute of Physics.
Added by: Laurent Cournède |