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Edon, V., Hugon, M. .-C., Agius, B., Durand, O., Eypert, C. & Cardinaud, C. (2008) Investigation of lanthanum and hafnium-based dielectric films by X-ray reflectivity, spectroscopic ellipsometry and X-ray photoelectron spectroscopy. Thin Solid Films, 516 7974–7978. 
Added by: Laurent Cournède (2016-03-10 21:58:41)
Type de référence: Article
DOI: 10.1016/j.tsf.2008.04.006
Numéro d'identification (ISBN etc.): 0040-6090
Clé BibTeX: Edon2008
Voir tous les détails bibliographiques
Catégories: PCM
Mots-clés: chemical-vapor-deposition, Diffusion barrier, electrical-properties, High-kappa dielectric materials, Interfacial layer, layer, Optical models
Créateurs: Agius, Cardinaud, Durand, Edon, Eypert, Hugon
Collection: Thin Solid Films
Consultations : 11/349
Indice de consultation : 2%
Indice de popularité : 0.5%
Résumé     
LaAlO3 and HfAlxOy thin films have been deposited by magnetron sputtering for replacement of SiO2 in new Complementary Metal Oxide Semiconductor applications. A three-layer model was found both in X-ray reflectivity (XRR) and spectroscopic ellipsometry (SE) analysis to be the best optical model for these two high-kappa materials. It was composed of an interfacial layer, covered by a layer of pure LaAlO3 or HfAlxOy, and a surface-roughness layer. In the case of LaAlO3 and HfAlxOy directly deposited on Si, the interfacial layer is a mixture of high-k material and amorphous-Si inclusions, which thickness is growing after post-deposition annealinu (PDA) in O-2 at 600 degrees C. On the contrary, for films deposited on thermally nitrided Si, the SiON-like interface did not change significantly after a PDA in 0, XRR analysis showed that the dielectric/Si interface of HfAlxOy/SiON/Si structure had a significantly smaller roughness than those of HfAlxOy/Si. When being deposited on SiON/Si substrates, HfAlxOy, and to a lesser extent LaAlO3, demonstrate superior diffusion barrier properties pointed out by X-ray photoelectron spectroscopy. (C) 2008 Elsevier B.V. All rights reserved.
Added by: Laurent Cournède  
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