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Hadjichristov, G. B., Gueorguiev, V. K., Ivanov, T. E., Marinov, Y. G., Ivanov, V. G. & Faulques, E. (2008) Silicon ion implanted PMMA for soft electronics. Org. Electron. 9 1051–1060.
Added by: Laurent Cournède (2016-03-10 21:58:40) |
| Type de référence: Article DOI: 10.1016/j.orgel.2008.08.003 Numéro d'identification (ISBN etc.): 1566-1199 Clé BibTeX: Hadjichristov2008 Voir tous les détails bibliographiques  |
Catégories: MIOPS Mots-clés: amorphous hydrogenated carbon, Conductivity, devices, Electrical conductivity, Electrical properties, enhancement, field-effect transistors, insulator, Ion implanted polymers, memory-element, Organic field-effect devices, polymeric gate electret, polymethylmethacrylate, Polymethylmethacrylate (PMMA), thin-film transistors Créateurs: Faulques, Gueorguiev, Hadjichristov, Ivanov, Ivanov, Marinov Collection: Org. Electron. |
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The electrical conductivity and field-effect transconductance of polymethylmethacrylate (PMMA) subjected to implantation with 50 keV silicon ions at doses in the range from 10(14) to 10(17) ions/cm(2) were examined. The electrical response of Si+-implanted PMMA was studied by direct current (DC) and alternating current (AC) measurements and was related to the structure formed in the host polymer. In addition to the sizable enhancement of the conductivity with the implantation dose, the field-effect transconductance found in Si+-implanted PMMA shows the potential of this material for soft-electronic applications. (c) 2008 Elsevier B.V. All rights reserved.
Added by: Laurent Cournède |