 |
 |
|
Granier, A., Begou, T., Makaoui, K., Soussou, A., Beche, B., Gaviot, E., Besland, M.-P. & Goullet, A. (2009) Influence of Ion Bombardment and Annealing on the Structural and Optical Properties of TiOx Thin Films Deposited in Inductively Coupled TTIP/O-2 Plasma. Plasma Process. Polym. 6 S741–S745.
Added by: Laurent Cournède (2016-03-10 21:41:25) |
| Type de référence: Article DOI: 10.1002/ppap.200931804 Numéro d'identification (ISBN etc.): 1612-8850 Clé BibTeX: Granier2009 Voir tous les détails bibliographiques  |
Catégories: PCM Mots-clés: anatase, annealing, chemical-vapor-deposition, Oxygen, pe-cvd, pecvd, rutile, titanium dioxide film, ttip, x-ray Créateurs: Beche, Begou, Besland, Gaviot, Goullet, Granier, Makaoui, Soussou Collection: Plasma Process. Polym. |
Consultations : 1/494
Indice de consultation : 3% Indice de popularité : 0.75% |
| Résumé |
|
TiO2 films were deposited in a low-pressure inductively coupled rf plasma in O-2/titanium tetraisopropoxide (TTIP). First, depositions were realized at floating potential using nitrogen as bubbling gas. The structural and optical properties of the films were studied, before and after annealing at 450 degrees C under air. As expected, as-deposited films are amorphous, with a columnar structure. A post-annealing under flowing air allows obtaining partially crystallized films in anatase phase. Secondly, films were deposited using nitrogen and oxygen as bubbling gas. In both cases, TiO2-like films exhibit very similar structure and optical properties. Finally, the effect of biasing the substrate was investigated. An improvement of film proper-ties has been found for a bias voltage of -15 V at T {<} 100 degrees C: deposited TiO2 film is dense (3.7) with a high refractive index (n = 2.32 at 634 nm) and partially crystallized in rutile phase.
Added by: Laurent Cournède |