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Nguyen, T. P., Renaud, C., Le Rendu, P. & Yang, S. H. (2009) Investigation of defects in organic semiconductors by charge based Deep Level Transient Spectroscopy (Q-DLTS). Rabier, J. & LeBourhis, E. (Eds.), Physica Status Solidi C - Current Topics in Solid State Physics, Vol 6, Weinheim. 
Added by: Laurent Cournède (2016-03-10 21:41:25)
Type de référence: Chapitre/Section
Clé BibTeX: Nguyen2009b
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Catégories: PMN
Mots-clés: emission, light-emitting-diodes, meh-ppv
Créateurs: Le Rendu, LeBourhis, Nguyen, Rabier, Renaud, Yang
Éditeur: Wiley-V C H Verlag Gmbh (Weinheim)
Collection: Physica {Status} {Solidi} {C} - {Current} {Topics} in {Solid} {State} {Physics}, {Vol} 6,
Consultations : 2/455
Indice de consultation : 2%
Indice de popularité : 0.5%
We report the results of measurements of traps in light emitting devices using a new derivative of poly(phenylene vinylene) (PPV) as an active material by the charge based Deep Level Transient Spectroscopy (Q-DLTS) technique. Diodes of structure Indium Tin Oxide (ITO)/PEDOT:PSS/poly(2-ethylhexyl)surfanyl-5- methoxy phenylene vinylene (MEH-S-PPV)/M with M = Al and M = Ca/Al were investigated by measurements of current-voltage-luminance characteristics. From analysis of these characteristics, evidence of charge trapping in devices was demonstrated. The trap parameters were then determined from Q-DLTS measurements, which were carried out on the samples as a function of the charging time, the applied voltage and the temperature. Five trap levels of activation energy in the range [0.-0.6 eV] and of density of order of 10(17) cm(-3) were identified in diodes with Ca/Al cathode. Electron (one level) and hole (four levels) traps were then clearly distinguished by performing measurements in hole-only devices. Trapping processes are discussed and tentatively proposed to performance of the light emitting diodes studied. (C) 2009 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim
Added by: Laurent Cournède  
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