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Hadjichristov, G. B., Ivanov, T. E., Gueorguiev, V. K., Marinov, Y. G., Stefanov, I., Ivanov, V. G. & Faulques, E. (2009) SILICON ION IMPLANTED PMMA FIELD-EFFECT STRUCTURE WITH ELECTRONIC MEMORY. J. Ovonic Res. 5 9–13. 
Added by: Laurent Cournède (2016-03-10 21:41:25)
Type de référence: Article
Numéro d'identification (ISBN etc.): 1584-9953
Clé BibTeX: Hadjichristov2009b
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Catégories: MIOPS
Mots-clés: charge, effect transistors, element, Ion implanted polymers, Organic field-effect devices, polymeric gate electret, polymethylmethacrylate, Polymethylmethacrylate (PMMA)
Créateurs: Faulques, Gueorguiev, Hadjichristov, Ivanov, Ivanov, Marinov, Stefanov
Collection: J. Ovonic Res.
Consultations : 8/353
Indice de consultation : 2%
Indice de popularité : 0.5%
Résumé     
We report on a field-effect transistor-like memory element based on chargeable organic dielectric as gate in polymethylmethacrylate (PMMA) implanted with Si(+) ions (50 keV energy, dose 10(16) ions/cm(2)). Utilizing the carbonized nanostructured active material with thickness of about 100 nm, as well as the organic interface created by silicon ion implantation in the subsurface region of the host polymer, the proposed memory cell exhibits electrical retention properties upon applying a gate voltage. The observed memory function is attributed to both the charged gate dielectric and organic interface formed in Si(+)-implanted PMMA. The ON and OFF-states can be written to the device by applying appropriate voltages to the gate electrode. Key feature of the memory element is the low writing voltage.
Added by: Laurent Cournède  
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