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Darga, A., Mencaraglia, D., Djebbour, Z., Dubois, M. A., Chouffot, R., Serhan, J., Couzinie-Devy, F., Barreau, N. & Kessler, J. (2009) Comparative study of Cu(In,Ga)Se-2/(PVD)In2S3 and Cu(In,Ga)Se-2/(CBD)CdS heterojunction based solar cells by admittance spectroscopy, current-voltage and spectral response measurements. Thin Solid Films, 517 2423–2426. 
Added by: Laurent Cournède (2016-03-10 21:41:24)
Type de référence: Article
DOI: 10.1016/j.tsf.2008.11.017
Numéro d'identification (ISBN etc.): 0040-6090
Clé BibTeX: Darga2009
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Catégories: CESES
Mots-clés: Admittance spectroscopy, buffer layer, buffer layers, cu(in, devices, ga)se-2, in2s3, Traps levels
Créateurs: Barreau, Chouffot, Couzinie-Devy, Darga, Djebbour, Dubois, Kessler, Mencaraglia, Serhan
Collection: Thin Solid Films
Consultations : 8/397
Indice de consultation : 2%
Indice de popularité : 0.5%
Résumé     
Co-evaporated Cu(In,Ga)Se-2 (CIGSe) based solar cells with Physical Vapour Deposited (PVD) Indium Sulphide (In2S3) as buffer layer have been studied by admittance spectroscopy and current-voltage characteristics measurements. The results have been compared to those obtained with a reference CBD-CdS/CIGSe device. In darkness, the OVD-In2S3 buffer layer devices exhibit higher densities of trapping defects and low values of shunt resistance. However, under illumination we have observed an important improvement of the In2S3/CIGSe electronic transport properties. This behavior seems to be linked to the presence of a metastable defect with activation energy of 0.3 eV. (C) 2008 Elsevier B.V. All rights reserved.
Added by: Laurent Cournède  
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