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Souilah, M., Rocquefelte, X., Lafond, A., Guillot-Deudon, C., Morniroli, J. .-P. & Kessler, J. (2009) Crystal structure re-investigation in wide band gap CIGSe compounds. Thin Solid Films, 517 2145–2148. 
Added by: Laurent Cournède (2016-03-10 21:41:24)
Type de référence: Article
DOI: 10.1016/j.tsf.2008.10.077
Numéro d'identification (ISBN etc.): 0040-6090
Clé BibTeX: Souilah2009
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Catégories: CESES
Mots-clés: cells, chalcopyrite, CIGSe solar cell, crystal structure, cugaxin1-xse2, cuinse2, Electronic band structure, phases, solar modules, stannite, system
Créateurs: Guillot-Deudon, Kessler, Lafond, Morniroli, Rocquefelte, Souilah
Collection: Thin Solid Films
Consultations : 7/718
Indice de consultation : 3%
Indice de popularité : 0.75%
Résumé     
There is agreement in the literature that Cu(In(1-x)Ga(x))Se(2) (CIGSe) absorber used in solar cells has an optimum composition (x approximate to 0.3) corresponding to a band gap (1.1-1.2 eV) far below the theoretical value giving the maximum (1.4-1.5 eV). This paper presents a re-investigation of the crystal structure of bulk CIGSe compounds for both stoichiometric and Cu-poor compositions. Regardless of the gallium content, all the stoichiometric compounds are found to adopt the well-known chalcopyrite structure (space group 1-42d) while a modification of the structure is evidenced for the high Ga-content Cu-poor compounds. The X-ray diffraction analyses demonstrate that the crystal structure Of Cu(0.743)In(0.543) Ga(0.543)Se(2) is derived from that of the stannite structure (space-group 1-42m). Ab-initio calculations show a strong dependence of the electronic structure near the Fermi level with the copper content. Such modifications are expected to significantly change the optical properties of Cu-poor CIGSe materials. (C) 2008 Elsevier B.V. All rights reserved.
Added by: Laurent Cournède  
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