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Liu, C.-E., Richard-Plouet, M., Besland, M.-P., Albertini, D., Estournes, C. & Brohan, L. (2009) Dip-coated La2Li2O7 as a buffer layer for growth of Bi3.25La0.75Ti3O12 films with enhanced (011) orientation. J. Eur. Ceram. Soc. 29 1977–1985. 
Added by: Laurent Cournède (2016-03-10 21:41:24)
Type de référence: Article
DOI: 10.1016/j.jeurceramsoc.2008.12.003
Numéro d'identification (ISBN etc.): 0955-2219
Clé BibTeX: Liu2009
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Catégories: CESES
Mots-clés: dielectric-properties, epitaxial-growth, films, Grain growth, grain-orientation, Hydrothermal synthesis, la2ti2o7 thin-films, perovskites, photocatalytic properties, polymerizable complex method, pulsed-laser deposition, Sintering, sol-gel synthesis, substituted bismuth titanate, surfaces
Créateurs: Albertini, Besland, Brohan, Estournes, Liu, Richard-Plouet
Collection: J. Eur. Ceram. Soc.
Consultations : 17/667
Indice de consultation : 3%
Indice de popularité : 0.75%
Thin-films of La2Ti2O7 were obtained by dip-coating process using a precursor salt in nitric acid solution. The effects of solution concentration, withdrawal speed, post-annealing duration and temperature were investigated both on grain size and orientation of the La2Ti2O7 thin layers. In addition, a target with the required stoichiometry for PVD deposition of La-substituted Bi4Ti3O12 (BLT) was successfully sintered by spark plasma sintering (SPS) at 750 degrees C. Finally (0 1 1)-oriented BLT ferroelectric films have been grown by RF sputtering on (1 1 0)-oriented La2Ti2O7 polycrystalline thin-film. A preferential orientation of BLT thin films has been obtained after annealing at a temperature lower than 650 degrees C. (C) 2008 Elsevier Ltd. All rights reserved.
Added by: Laurent Cournède  
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