Biblio. IMN

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Sanchez, G., Abdallah, B., Tristant, P., Dublanche-Tixier, C., Djouadi, M. A., Besland, M. P., Jouan, P. Y. & Bologna Alles, A. (2009) Microstructure and mechanical properties of AlN films obtained by plasma enhanced chemical vapor deposition. J. Mater. Sci. 44 6125–6134. 
Added by: Laurent Cournède (2016-03-10 21:41:23)
Type de référence: Article
DOI: 10.1007/s10853-009-3847-3
Numéro d'identification (ISBN etc.): 0022-2461
Clé BibTeX: Sanchez2009
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Catégories: PCM
Mots-clés: aluminum nitride, growth, ir, molecular-beam epitaxy, nitride thin-films, stresses, substrate
Créateurs: Abdallah, Besland, Bologna Alles, Djouadi, Dublanche-Tixier, Jouan, Sanchez, Tristant
Collection: J. Mater. Sci.
Consultations : 8/400
Indice de consultation : 2%
Indice de popularité : 0.5%
AlN films were prepared with a microwave plasma enhanced chemical vapor deposition reactor working at different process temperatures in order to obtain polycrystalline aOE (c) 0001 {>} oriented films for piezoelectric applications. The films developed were characterized in terms of microstructure, composition, and mechanical properties. Crystalline development and a single orientation were obtained at high temperatures, where at the same time an increase in mechanical intrinsic stresses was observed. Well crystallized aOE (c) 0001 {>} films were obtained at temperature as low as 500 A degrees C. Furthermore, the evolution of microstructure with thickness at higher temperatures showed a single aOE (c) 0001 {>} orientation with progressive increase of the texture as the thickness increased. This fact was related with changes in the observed microstructure along the film z-axis, evaluated by high resolution transmission electronic microscopy and selected area electron diffraction. Although orientation dispersion of these films, evidenced by the rocking curves FWHM, remained relatively high ({>} 9A degrees), they can be regarded as promising for piezoelectric applications. Annealing tests conducted at relatively high temperatures with films deposited at low temperature indicated that thermal effects have only a major effect during the film growth for the temperature values employed.
Added by: Laurent Cournède  
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