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Painchaud, T., Barreau, N. & Kessler, J. (2010) Solar Grade CuInS(2) Thin Films Grown at 250 degrees C. Yamada, A., Heske, C., Contreras, M. A., Igalson, M. & Irvine, S. J. C. (Eds.), Thin-Film Compound Semiconductor Voltaics-2009 Warrendale.
Added by: Laurent Cournède (2016-03-10 21:37:33) |
| Type de référence: Chapitre/Section Clé BibTeX: Painchaud2010 Voir tous les détails bibliographiques  |
Catégories: CESES Mots-clés: cells, impact, Interface, naxcu1-xin5s8 Créateurs: Barreau, Contreras, Heske, Igalson, Irvine, Kessler, Painchaud, Yamada Éditeur: Materials Research Society (Warrendale) Collection: Thin-{Film} {Compound} {Semiconductor} {Voltaics}-2009 |
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CuInS(2) (chalcopyrite structure) thin films were synthesized at 250 degrees C using a two-stage process consisting firstly in the co-evaporation of a large grain In(2)S(3) (defect spinel structure) precursor layer followed by the addition of copper and sulfur. The crystalline properties of the resulting films are similar to those leading to high efficiency solar cells. An energy conversion efficiency of 6.7\% has been attained with a 1.5 mu m thick CuInS(2) layer and a standard CdS buffer layer/ZnO window structure. Improved performances can be expected through the growth of thicker absorbers.
Added by: Laurent Cournède |