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Marko, H., Hultqvist, A., Platzer-Bjorkman, C., Noel, S. & Kessler, J. (2010) Effects of CuIn(0,5)Ga(0,5)Se(2) Growth by Isothermal and Bithermal Cu-Poor/Rich/Poor Sequence on Solar Cells Properties. Yamada, A., Heske, C., Contreras, M. A., Igalson, M. & Irvine, S. J. C. (Eds.), Thin-Film Compound Semiconductor Voltaics-2009 Warrendale. 
Added by: Laurent Cournède (2016-03-10 21:37:33)
Type de référence: Chapitre/Section
Clé BibTeX: Marko2010
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Catégories: CESES
Mots-clés: alloys, cu(in, ga-content, ga)se-2, layers, point
Créateurs: Contreras, Heske, Hultqvist, Igalson, Irvine, Kessler, Marko, Noel, Platzer-Bjorkman, Yamada
Éditeur: Materials Research Society (Warrendale)
Collection: Thin-{Film} {Compound} {Semiconductor} {Voltaics}-2009
Consultations : 12/328
Indice de consultation : 1%
Indice de popularité : 0.25%
Résumé     
Co-evaporated CuIn(0,5)Ga(0,5)Se(2) thin film solar cells were grown using a sequential Cu-Poor/Rich/Poor process (CUPRO). During the growth process, the substrate temperature was either kept constant at 570 degrees C (iso-CUPRO) or decreased during the first step to either 360 or 430 or 500 degrees C (bi-CUPRO). According to atomic force microscopy (AFM) measurements, the lower the temperature is in the first step the smoother the final CIGS surface becomes. By decreasing the first step temperature, cross-section scanning electron microscopy (SEM) and theta-2 theta x-ray diffraction (XRD) do not reveal clearly any important changes of morphology and crystallographic preferred orientation. SLG/Mo/CIGS/Buffer layer/i-ZnO/ZnO:Al/grid(Ni/Al/Ni) solar cells with either a chemical bath deposited CdS or an atomic layer deposited Zn(O,S) buffer layer were fabricated. For both buffer layers, the bi-CUPRO processes lead to higher efficiencies. Besides, using Zn(O,S), the electronic collection was improved for the infrared spectrum as well as for the ultraviolet spectrum. This resulted in efficiencies close to 14,5\% for the Zn(O,S) cells.
Added by: Laurent Cournède  
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