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Couzinie-Devy, F., Arzel, L., Barreau, N., Guillot-Deudon, C., Harel, S., Lafond, A. & Kessler, J. (2010) Characterization of (In1-xAlx)(2)S-3 thin films grown by co-evaporation. J. Cryst. Growth, 312 502–506. 
Added by: Laurent Cournède (2016-03-10 21:37:33)
Type de référence: Article
DOI: 10.1016/j.jcrysgro.2009.11.057
Numéro d'identification (ISBN etc.): 0022-0248
Clé BibTeX: CouzinieDevy2010
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Catégories: CESES, MIOPS
Mots-clés: buffer layers, Co-evaporation, cu(in, ga)se-2 solar-cells, indium sulfide, Polycrystalline deposition, Solar cells, sulfides
Créateurs: Arzel, Barreau, Couzinie-Devy, Guillot-Deudon, Harel, Kessler, Lafond
Collection: J. Cryst. Growth
Consultations : 6/769
Indice de consultation : 2%
Indice de popularité : 0.5%
In this paper, it is shown that (In1-xAlx)(2)S-3 thin films can be grown through the co-evaporation of elemental indium, aluminum and sulfur. It is nevertheless observed that the introduction of aluminum within the indium sulfide thin films hinders the crystallites size and even yields almost amorphous films when x is 0.2. The investigations of the optical properties of the films reveal that contrary to what could be expected, the band gap increase is low; the highest values measured do not exceed 2.2 eV. However, as suggested by X-ray photoelectron spectroscopy measurements, such widening most probably affects the lower conduction band states. (C) 2009 Elsevier B.V. All rights reserved.
Added by: Laurent Cournède  
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