IMN

Biblio. IMN

Référence en vue solo

Boulard, F., Baylet, J. & Cardinaud, C. (2010) Influence of Cadmium Composition on CH4-H-2-Based Inductively Coupled Plasma Etching of Hg1-x Cd (x) Te. J. Electron. Mater. 39 1256–1261. 
Added by: Laurent Cournède (2016-03-10 21:37:32)
Type de référence: Article
DOI: 10.1007/s11664-010-1221-5
Numéro d'identification (ISBN etc.): 0361-5235
Clé BibTeX: Boulard2010
Voir tous les détails bibliographiques
Catégories: PCM
Mots-clés: CH4-based plasma, ch4/h-2, chemistry, cyclotron-resonance plasmas, detectors, energy, focal-plane arrays, HgCdTe, hydrogen, Inductively coupled plasma (ICP) etching, pitch, Surface, X-ray photoelectron spectroscopy (XPS)
Créateurs: Baylet, Boulard, Cardinaud
Collection: J. Electron. Mater.
Consultations : 4/807
Indice de consultation : 5%
Indice de popularité : 1.25%
Résumé     
In this paper, inductively coupled plasma etching of Hg1-x Cd (x) Te in CH4-H-2-based chemistry is studied. This work is focused on the effects of substrate temperature, ion energy, and alloy composition on etch rate and surface composition. A strong influence of substrate temperature is shown. The etch rate is multiplied by more than a factor of 3 when the temperature is increased from 5A degrees C to 35A degrees C. A purely physical Cd removal mechanism is ruled out using x-ray photoelectron spectroscopy data from samples etched at different temperatures. Under the conditions of very low ion energy, an etching mechanism limited by the supply of active species from the plasma predicts an Hg1-x Cd (x) Te etch rate evolution that fits very well with our data.
Added by: Laurent Cournède  
wikindx 4.2.2 ©2014 | Références totales : 2699 | Requêtes métadonnées : 62 | Exécution de script : 0.11712 secs | Style : Harvard | Bibliographie : Bibliographie WIKINDX globale