 |
 |
|
Naghavi, N., Abou-Ras, D., Allsop, N., Barreau, N., Buecheler, S., Ennaoui, A., Fischer, C. .-H., Guillen, C., Hariskos, D., Herrero, J., Klenk, R., Kushiya, K., Lincot, D., Menner, R., Nakada, T., Platzer-Bjorkman, C., Spiering, S., Tiwari, A. N. & Torndahl, T. (2010) Buffer layers and transparent conducting oxides for chalcopyrite Cu(In,Ga)(S,Se)(2) based thin film photovoltaics: present status and current developments. Prog. Photovoltaics, 18 411–433.
Added by: Laurent Cournède (2016-03-10 21:37:32) |
| Type de référence: Article DOI: 10.1002/pip.955 Numéro d'identification (ISBN etc.): 1062-7995 Clé BibTeX: Naghavi2010 Voir tous les détails bibliographiques  |
Catégories: CESES, INTERNATIONAL Mots-clés: band-offset, Cd-free buffer layers, chalcopyrite-based solar cells, chemical-bath deposition, cu(in, ga)(s, ga)se-2 solar-cells, growth-mechanism, heterojunction formation, indium sulfide, Interface, se)(2), spray-pyrolysis, transparent conducting oxides, window layers, zinc-oxide, zno-al films Créateurs: Abou-Ras, Allsop, Barreau, Buecheler, Ennaoui, Fischer, Guillen, Hariskos, Herrero, Klenk, Kushiya, Lincot, Menner, Naghavi, Nakada, Platzer-Bjorkman, Spiering, Tiwari, Torndahl Collection: Prog. Photovoltaics |
Consultations : 1/566
Indice de consultation : 4% Indice de popularité : 1% |
| Résumé |
|
The aim of the present contribution is to give a review on the recent work concerning Cd-free buffer and window layers in chalcopyrite solar cells using various deposition techniques as well as on their adaptation to chalcopyrite-type absorbers such as Cu(In,Ga)Se-2, CuInS2, or Cu(In,Ga)(S,Se)(2). The corresponding solar-cell performances, the expected technological problems, and current attempts for their commercialization will be discussed. The most important deposition techniques developed in this paper are chemical bath deposition, atomic layer deposition, ILGAR deposition, evaporation, and spray deposition. These deposition methods were employed essentially for buffers based on the following three materials: In2S3, ZnS, Zn1-xMgxO. Copyright (C) 2010 John Wiley \& Sons, Ltd.
Added by: Laurent Cournède |