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Cario, L., Vaju, C., Corraze, B., Guiot, V. & Janod, E. (2010) Electric-Field-Induced Resistive Switching in a Family of Mott Insulators: Towards a New Class of RRAM Memories. Adv. Mater. 22 5193–+. 
Added by: Laurent Cournède (2016-03-10 21:37:31)
Type de référence: Article
DOI: 10.1002/adma.201002521
Numéro d'identification (ISBN etc.): 0935-9648
Clé BibTeX: Cario2010
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Catégories: PMN
Mots-clés: gata4se8, possible superconductivity, transition
Créateurs: Cario, Corraze, Guiot, Janod, Vaju
Collection: Adv. Mater.
Consultations : 2/404
Indice de consultation : 2%
Indice de popularité : 0.5%
Résumé     
Flash memories (USB portable drives) are close to their miniaturization limits. The ultimate evolution of such devices is believed to exploit different concepts such as electronic phase transitions. Here we show that an electric field can trigger fast resistive switching in the fragile Mott insulators AM(4)X(8) (A = Ga, Ge; M = V, Nb, Ta; X = S, Se). This new type of resistive switching could lead to a new class of resistive random access memory (RRAM) with fast writing/erasing times (down to 50 ns) and resistance ratios Delta R/R of the order of 25\% at room temperature.
Added by: Laurent Cournède  
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