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Souchier, E., Cario, L., Corraze, B., Moreau, P., Mazoyer, P., Estournes, C., Retoux, R., Janod, E. & Besland, M.-P. (2011) First evidence of resistive switching in polycrystalline GaV4S8 thin layers. Phys. Status Solidi-Rapid Res. Lett. 5 53–55. 
Added by: Laurent Cournède (2016-03-10 21:32:21)
Type de référence: Article
DOI: 10.1002/pssr.201004392
Numéro d'identification (ISBN etc.): 1862-6254
Clé BibTeX: Souchier2011
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Catégories: ST2E
Créateurs: Besland, Cario, Corraze, Estournes, Janod, Mazoyer, Moreau, Retoux, Souchier
Collection: Phys. Status Solidi-Rapid Res. Lett.
Consultations : 8/453
Indice de consultation : 3%
Indice de popularité : 0.75%
Résumé     
Recently a new type of reversible and non-volatile resistive switching was discovered in single crystals of Mott insulators AM(4)X(8) (A = Ga, Ge; M = V, Nb, Ta; X = S, Se). Here we report on the first synthesis of thin layers (thicknesses in the 100 to 1000 nm range) of GaV4S8 by RF magnetron sputtering process. Energy dispersive spectroscopy, X-ray diffraction and TEM analyses attest the high quality of polycrystalline GaV4S8 thin layers. Electrical measurements demonstrate that deposited GaV4S8 thin films exhibit a non-volatile reversible resistive switching at room temperature with writing/erasing times of similar to 10 mu s and a memory window (R-high-R-low)/R-low {>} 33\%. (C) 2010 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim
Added by: Laurent Cournède  
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