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Al Alam, E., Cortes, I., Besland, M. .-P., Goullet, A., Lajaunie, L., Regreny, P., Cordier, Y., Brault, J., Cazarre, A., Isoird, K., Sarrabayrouse, G. & Morancho, F. (2011) Effect of surface preparation and interfacial layer on the quality of SiO2/GaN interfaces. J. Appl. Phys. 109 084511. 
Added by: Laurent Cournède (2016-03-10 21:32:21)
Type de référence: Article
DOI: 10.1063/1.3572236
Numéro d'identification (ISBN etc.): 0021-8979
Clé BibTeX: AlAlam2011
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Catégories: PCM
Mots-clés: cyclotron-resonance plasma, devices, films, gan mosfets, mos capacitors, n-type, oxide, semiconductor capacitors, sio2/inp structures, spectroscopy
Créateurs: Al Alam, Besland, Brault, Cazarre, Cordier, Cortes, Goullet, Isoird, Lajaunie, Morancho, Regreny, Sarrabayrouse
Collection: J. Appl. Phys.
Consultations : 4/473
Indice de consultation : 1%
Indice de popularité : 0.25%
Résumé     
In this work, SiO2/GaN MOS structures have been fabricated using Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition (ECR-PECVD) for deposition of silicon dioxide (SiO2) at low temperature (300 degrees C) on N-type, NID and P-type GaN epitaxial layers. Surface preparation involving chemical, UV-Ozone oxidation and oxygen plasma oxidation have been investigated by XPS analysis of the GaN surfaces prior to SiO2 deposition. The association of UV ozone and plasma oxidation allows a complete removal of carbon contamination and has a huge beneficial effect on the quality of the SiO2/GaN interface. Electrical C-V characterizations put into evidence the improved quality of the SiO2/GaN interface with a low interface trap density of 10(10) cm(-2) eV(-1). The advantage of this soft interface treatment is thus specially observed for the N-type samples without annealing step, whereas improvements are still needed in the case of NID and P-type samples. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3572236]
Added by: Laurent Cournède  
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