Bertaud, T., Bermond, C., Challali, F., Goullet, A., Vallee, C. & Flechet, B. (2011) Ultra wide band frequency characterization of integrated TiTaO-based metal-insulator-metal devices. J. Appl. Phys. 110 044110.
Added by: Laurent Cournède (2016-03-10 21:32:20)
|Type de référence: Article
Numéro d'identification (ISBN etc.): 0021-8979
Clé BibTeX: Bertaud2011
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Mots-clés: access memory application, atomic-layer deposition, chemical-vapor-deposition, density mim capacitors, dielectric-relaxation, electrical characteristics, optical-properties, silicate thin-films
Créateurs: Bermond, Bertaud, Challali, Flechet, Goullet, Vallee
Collection: J. Appl. Phys.
Consultations : 5/399
Indice de consultation : 2%
Indice de popularité : 0.5%
The titanium tantalum oxide, TiTaO, was fully characterized in situ in an integrated metal-insulator-metal (MIM) configuration on a wide frequency band, from 1 mHz to 30 GHz. First, XPS and XRD analysis show that TiTaO dielectric is amorphous and presents Ti-O, Ta-O, and Ti-Ta bounds. Next, by using dedicated MIM test devices and a specific extraction procedure, both relative permittivity kappa and loss tangent tan delta were extracted on the wide frequency band. The results show a dependence on both frequency and thickness. Conduction mechanism of ion impurities such as oxygen vacancies at very low frequencies (below 0.1 Hz), Maxwell-Wagner relaxations due to space charges at electrode interface (between 0.1 and 5 Hz), and dielectric grain boundaries or hopping (between 1 and 100 MHz) are underlined and studied with temperature measurements. The paper shows the usefulness of in situ wideband frequency measurements and that the dielectric permittivity of TiTaO in a 100 nm thick film is decreasing from 86 at 10 kHz to 20 at 10 GHz. (C) 2011 American Institute of Physics. [doi:10.1063/1.3626067]
Added by: Laurent Cournède