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Serhan, J., Djebbour, Z., Mencaraglia, D., Couzinie-Devy, F., Barreau, N. & Kessler, J. (2011) Influence of Ga content on defects in CuInxGa1-xSe2 based solar cell absorbers investigated by sub gap modulated photocurrent and admittance spectroscopy. Thin Solid Films, 519 7312–7316. 
Added by: Laurent Cournède (2016-03-10 21:32:20)
Type de référence: Article
DOI: 10.1016/j.tsf.2011.01.095
Numéro d'identification (ISBN etc.): 0040-6090
Clé BibTeX: Serhan2011
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Catégories: CESES
Mots-clés: Admittance spectroscopy, cigs, cuinse2, dos, Heterojunctions, Photocurrent spectroscopy
Créateurs: Barreau, Couzinie-Devy, Djebbour, Kessler, Mencaraglia, Serhan
Collection: Thin Solid Films
Consultations : 11/344
Indice de consultation : 2%
Indice de popularité : 0.5%
Résumé     
In this work, we investigate the influence of gallium content on the defects properties of co-evaporated CuInxGa1-xSe2 by sub gap modulated photocurrent spectroscopy and admittance spectroscopy techniques. A series of CuInxGa1-xSe2 based solar cells with different gallium content in the range from 0\% to 33\%, and with the same CdS buffer layer have been investigated. On one hand, photocurrent spectroscopy results show 2 types of defects named D1 and D2, and on the other hand, admittance spectroscopy results exhibit only one type of defect. I-V curves show that one of the two defects probed by photocurrent is responsible of the dominant recombination mechanisms next to the heterointerface, between the absorber and the buffer layers. Moreover, I-V curves under AM 1.5 conditions show that the cell with no probed D2 defect presents the best photovoltaic performances. (C) 2011 Elsevier B.V. All rights reserved.
Added by: Laurent Cournède  
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