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Lallement, L., Rhallabi, A., Cardinaud, C. & Fernandez, M. C. P. (2011) Modelling of fluorine based high density plasma for the etching of silica glasses. J. Vac. Sci. Technol. A, 29 051304. 
Added by: Laurent Cournède (2016-03-10 21:32:20)
Type de référence: Article
DOI: 10.1116/1.3624786
Numéro d'identification (ISBN etc.): 0734-2101
Clé BibTeX: Lallement2011
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Catégories: PCM
Mots-clés: 2-dimensional simulation, angular-dependence, chlorine, discharges, inductively-coupled plasma, ion flux, mechanisms, polysilicon, sio2, uniformity
Créateurs: Cardinaud, Fernandez, Lallement, Rhallabi
Collection: J. Vac. Sci. Technol. A
Consultations : 5/453
Indice de consultation : 1%
Indice de popularité : 0.25%
Résumé     
An etching simulator has been developed to study the etching of commercial silica glass (Pyrex (R), D263 (R), AF45 (R), and Vycor (R)) in a SF(6)/Ar inductively coupled plasma (ICP) discharge. The etching model is based on the development of the plasma kinetic model coupled to a two dimensional (2D) Monte Carlo cellular surface model to predict the etched surface morphology as a function of the operating conditions. The SF6/Ar plasma model allows us to predict the neutral and ion species fluxes, as well as the density and the temperature of electrons, as a function of the reactor operating conditions. Such output parameters are used as input parameters in both the sheath and etching models. The 2D Monte Carlo cellular model is based on the representation of both the substrate and the mask by uniform cells, which each represents a real number of sites. The preferential redeposition mechanism of the etched products on the metallic sites seems to play an important role on the formation and the propagation of the etched surface roughness. The results obtained by the model are compared with the experimental results for etching rate and roughness. A satisfactory agreement between the experimental results and the model concerning the etching rate and the etched surface morphology has been obtained for different glasses. VC 2011 American Vacuum Society. [DOI: 10.1116/1.3624786]
Added by: Laurent Cournède  
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