Bulou, S., Le Brizoual, L., Miska, P., de Poucques, L., Hugon, R., Belmahi, M. & Bougdira, J. (2011) The influence of CH4 addition on composition, structure and optical characteristics of SiCN thin films deposited in a CH4/N-2/Ar/hexamethyldisilazane microwave plasma. Thin Solid Films, 520 245–250.
Added by: Laurent Cournède (2016-03-10 21:32:19)
|Type de référence: Article
Numéro d'identification (ISBN etc.): 0040-6090
Clé BibTeX: Bulou2011
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Mots-clés: amorphous-silicon, chemical-vapor-deposition, Fourier transform infrared spectroscopy, h films, Hexamethyldisilazane, induced cvd, Microwave plasma-assisted chemical vapor deposition, nitride, optical properties, oxynitride films, pecvd, Silicon carbonitride, silicon carbonitride films, substrate-temperature, X-ray photoelectron spectroscopy
Créateurs: Belmahi, Bougdira, Bulou, Hugon, Le Brizoual, Miska, de Poucques
Collection: Thin Solid Films
Consultations : 8/370
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Amorphous silicon carbonitride (a-SiCN) thin films were synthesized in a microwave plasma assisted chemical vapor deposition system using N-2, Ar, CH4 and hexamethyldisilazane vapor (HMDSN). Composition, morphology and optical constants of the layers have been studied as a function of CH4 rate in the range 0 to 9\%. It was found that films are mainly composed of silicon nitride like compound whatever the CH4 rate. However, CH4 addition leads to less hydrogenated and denser films. In addition, a refractive index augmentation from 1.7 to 2.0 and a Tauc gap decrease from 5.2 eV to 4.8 eV is measured with CH4 rate increase. It is believed that the refractive index augmentation is due to higher thin film density whereas hydrogen bonds decrease is assumed to contribute to the band gap narrowing. Besides. CH4 addition to the gaseous mixture increases thin film oxidation resistance. These results show the ability of varying composition, structure and optical constants of a-SiCN films by modifying CH4 rate in a N-2/Ar/HMDSN plasma. (C) 2011 Elsevier B.V. All rights reserved.
Added by: Laurent Cournède