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Couzinie-Devy, F., Cadel, E., Barreau, N., Arzel, L. & Pareige, P. (2011) Atom probe study of Cu-poor to Cu-rich transition during Cu(In,Ga)Se-2 growth. Appl. Phys. Lett. 99 232108. 
Added by: Laurent Cournède (2016-03-10 21:32:19)
Type de référence: Article
DOI: 10.1063/1.3665948
Numéro d'identification (ISBN etc.): 0003-6951
Clé BibTeX: CouzinieDevy2011
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Catégories: CESES
Mots-clés: cuinse2, evaporation, films, model, Recrystallization, Sodium
Créateurs: Arzel, Barreau, Cadel, Couzinie-Devy, Pareige
Collection: Appl. Phys. Lett.
Consultations : 5/382
Indice de consultation : 2%
Indice de popularité : 0.5%
Résumé     
Atomic scale chemistry of polycrystalline Cu(In,Ga)Se-2 (CIGSe) thin film has been characterized at key points of the 3-stage process using atom probe tomography. 3D atom distributions have been reconstructed when the layer is Cu-poor ([Cu]/([Ga] vertical bar [In]) {<} 1), Cu-rich ([Cu]/([Ga] vertical bar [In]) {>} 1), and at the end of the process. Particular attention has been devoted to grain boundary composition and Na atomic distribution within the CIGSe layer. Significant variation of composition is highlighted during the growing process, providing fundamental information helping the understanding of high efficiency CIGSe formation. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3665948]
Added by: Laurent Cournède  
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