IMN

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Aissa, A. K., Semmar, N., Meneses, D. S. D., Le Brizoual, L., Gaillard, M., Petit, A., Jouan, P. .-Y., Boulmer-Leborgne, C. & Djouadi, M. A. (2012) Thermal conductivity measurement of AlN films by fast photothermal method. 6th European Thermal Sciences Conference (eurotherm 2012) Bristol. 
Added by: Laurent Cournède (2016-03-10 21:28:40)
Type de référence: Chapitre/Section
Clé BibTeX: Aissa2012
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Catégories: PCM
Mots-clés: growth, nitride thin-films
Créateurs: Aissa, Boulmer-Leborgne, Djouadi, Gaillard, Jouan, Le Brizoual, Meneses, Petit, Semmar
Éditeur: Iop Publishing Ltd (Bristol)
Collection: 6th {European} {Thermal} {Sciences} {Conference} (eurotherm 2012)
Consultations : 8/447
Indice de consultation : 1%
Indice de popularité : 0.25%
Résumé     
Aluminum nitride (AlN) films were deposited by reactive direct current Magnetron Sputtering (dcMS) on Si (100) substrates, with different thicknesses, in Ar-N-2 gas mixture. The films were characterized by X-ray diffraction (XRD), profilometry, scanning electron microscopy and UV-Visible Ellipsometry. The effect of the thickness on the thermal conductivity of AlN films was investigated using a fast IR pyrometry device. The XRD measurements show that AlN films are texturated along (002) direction. Moreover, X-ray rocking curve measurements indicate that the crystalline quality of the AlN is improved with the increase of film thickness. Optical analyses by IR spectroscopy and UV-Visible Ellipsometry demonstrate a high optical band gap of pure AlN films with semi-transparent behaviour in the IR range (1 to 7 mu m). The effective thermal conductivity of the AlN films is strongly dependent on the film thickness. An effective thermal conductivities between (80 +/- 05) and (175 +/- 15) W.m(-1).K-1 were measured for 260 and 8000 nm thick AlN film.
Added by: Laurent Cournède  
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