Karpinski, A., Ferrec, A., Richard-Plouet, M., Cattin, L., Djouadi, M. A., Brohan, L. & Jouan, P. .-Y. (2012) Deposition of nickel oxide by direct current reactive sputtering Effect of oxygen partial pressure. Thin Solid Films, 520 3609–3613.
Added by: Laurent Cournède (2016-03-10 21:28:40)
|Type de référence: Article
Numéro d'identification (ISBN etc.): 0040-6090
Clé BibTeX: Karpinski2012
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|Catégories: CESES, PCM
Mots-clés: electrochromic properties, glow-discharge characteristics, magnetron, Nickel oxide (NiO), nio thin-films, Reactive sputtering and electrical discharge characteristics, target, thin films, Transparent p-type semiconductor
Créateurs: Brohan, Cattin, Djouadi, Ferrec, Jouan, Karpinski, Richard-Plouet
Collection: Thin Solid Films
Consultations : 13/833
Indice de consultation : 4%
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Nickel oxide thin films were deposited by Direct Current magnetron reactive sputtering from Ni target onto SnO2:F conductive glass substrates. The process was carried out without intentional heating, in an argon/oxygen gas mixture with various oxygen contents and discharge currents. The polycrystalline NiO thin films were deposited with controlled growth of the structure along  and  crystallographic directions for chosen conditions. Morphology of as-deposited films was found to depend on the preferentially oriented NiO crystals. Moreover, on the basis of discharge voltage as a function of the O-2 partial pressure for a constant discharge current, we present here the method to estimate the deposition conditions allowing us to achieve the desired preferential growth of transparent p-type semiconductor NiO, by Direct Current magnetron reactive sputtering. (c) 2011 Elsevier B.V. All rights reserved.
Added by: Laurent Cournède