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Karpinski, A., Ferrec, A., Richard-Plouet, M., Cattin, L., Djouadi, M. A., Brohan, L. & Jouan, P. .-Y. (2012) Deposition of nickel oxide by direct current reactive sputtering Effect of oxygen partial pressure. Thin Solid Films, 520 3609–3613. 
Added by: Laurent Cournède (2016-03-10 21:28:40)
Type de référence: Article
DOI: 10.1016/j.tsf.2011.12.068
Numéro d'identification (ISBN etc.): 0040-6090
Clé BibTeX: Karpinski2012
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Catégories: CESES, PCM
Mots-clés: electrochromic properties, glow-discharge characteristics, magnetron, Nickel oxide (NiO), nio thin-films, Reactive sputtering and electrical discharge characteristics, target, thin films, Transparent p-type semiconductor
Créateurs: Brohan, Cattin, Djouadi, Ferrec, Jouan, Karpinski, Richard-Plouet
Collection: Thin Solid Films
Consultations : 13/833
Indice de consultation : 4%
Indice de popularité : 1%
Résumé     
Nickel oxide thin films were deposited by Direct Current magnetron reactive sputtering from Ni target onto SnO2:F conductive glass substrates. The process was carried out without intentional heating, in an argon/oxygen gas mixture with various oxygen contents and discharge currents. The polycrystalline NiO thin films were deposited with controlled growth of the structure along [111] and [200] crystallographic directions for chosen conditions. Morphology of as-deposited films was found to depend on the preferentially oriented NiO crystals. Moreover, on the basis of discharge voltage as a function of the O-2 partial pressure for a constant discharge current, we present here the method to estimate the deposition conditions allowing us to achieve the desired preferential growth of transparent p-type semiconductor NiO, by Direct Current magnetron reactive sputtering. (c) 2011 Elsevier B.V. All rights reserved.
Added by: Laurent Cournède  
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